1 October 1990 Atomic scale imaging of the structure and chemistry of semiconductor interfaces by Z-contrast stem
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Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20788
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
A new technique for high-resolution electron microscopy is described together with a number of applications involving semiconductor interfaces. Optically, this technique represents the realization of incoherent imaging at atomic resolution, with the advantages over conventional coherent imaging methods of improved resolution and an unambiguous, simply interpretable image. In addition, the image shows strong compositional sensitivity, thus providing a direct map of a material's structure and chemistry on the atomic scale.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen J. Pennycook, D. E. Jesson, M. F. Chisholm, "Atomic scale imaging of the structure and chemistry of semiconductor interfaces by Z-contrast stem", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20788; https://doi.org/10.1117/12.20788
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