1 October 1990 Correlation of electrical and structural microanalysis of dendritic web silicon
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Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20796
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
To correlate microscopic with macroscopic properties and to investigate minority carrier recombination at the twins planes in dendritic web Si on a microscopic scale, cross-sectional EBIC has been developed. The twin planes are found to be transparent to minority carriers In as-grown material Irrespective of its quality. Upon cell processing, however, it is found that the twin planes in poor quality material become highly recombinative while recombination at regions close to the surface decreases. In good quality web material the twin planes remain benign after thermal cycling. DLTS measurements have also been performed and the results are consistent with EBIC. Crosssectional TEM results also correlate with the electrical measurements showing the appearance of a large density of defect clusters at the twin planes of the poor quality web upon thermal processing.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kuntal Joardar, Kuntal Joardar, Chan Ouk Jung, Chan Ouk Jung, Stephen J. Krause, Stephen J. Krause, Dieter K. Schroder, Dieter K. Schroder, Daniel L. Meier, Daniel L. Meier, } "Correlation of electrical and structural microanalysis of dendritic web silicon", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20796; https://doi.org/10.1117/12.20796
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