1 October 1990 Effects of inversion asymmetry on GaAs quantum wires
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Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990); doi: 10.1117/12.20787
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The spin splittings E of the conduction subbands of zinc-blende semiconductors which possess inversion asymmetry of the microscopic crystal potentials are investigated theoretically for quantum wire structure. Due to inversion asymmetry, the 2 x 2 Hamiltonian in the spin basis has nonvanishing off-diagonal elements. We have solved the equivalent matrix elgenvalue problem obtained by expanding the eigenvectors in an N-term Fourier series chosen to satisfy the zero boundary conditions automatically. By increasing N step by step, the eigenenergies are shown to converge quickly to assigned accuracy. For a quantum wire with sizes L and L (I I [001]), and for free propagation wavevector k, we find that (1) when Ly is parallel to [0101, E increase linearly with k if L L2, but become negligible ifL =L; (2) when L is parallel to [1 10], \E as a function ofk can be Nshaped; and (3) when L and L are fixed and is rotated around LEshow 4 mm symmetry.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johnson Lee, Milton O. Vassell, "Effects of inversion asymmetry on GaAs quantum wires", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20787; https://doi.org/10.1117/12.20787
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KEYWORDS
Semiconductors

Gallium arsenide

Crystals

Nanostructures

Wave propagation

Quantum wells

Diamond

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