1 October 1990 Einstein relation in quantum wires of small-gap materials in the presence of crossed electric and magnetic fields
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Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20780
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
An attempt is made to study the Einstein relation for the diffuaivlty-mobility ratio of the electron in quantum well wires of Small-gap Semiconductors in the preaence of crossed electric and magnetic fields on the basis of a newly derived electron energy spectrum considering all types anisotropies in the band parameters. It is found taking n-CdGeAs as an example that, the same ratio increases with electron concentration and electric field in an oscillatory way. Besides, it decreases with thickness and the crystal field parameter Influence sinifigantly the ratio in the whole range of variables considered. We have also suggested an experimental method of determining the Einstein relation in degenerate materials having arbitrary dispersion law. The expression for quanturn well wires of parabolic semi-conductors are also obtained from our generalised expressions derived in the absence of cross field configuration.
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Kamakhya Prasad Ghatak, Kamakhya Prasad Ghatak, Manabendra Mondal, Manabendra Mondal, Sankar Bhattacharyya, Sankar Bhattacharyya, } "Einstein relation in quantum wires of small-gap materials in the presence of crossed electric and magnetic fields", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20780; https://doi.org/10.1117/12.20780
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