1 October 1990 Electron-waveguide transmission resonance at a defect
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Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20777
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We study theoretically the effect of few elastic scatterers on electron transport in the ballistic regime. In laterally confined structures (quasi 1-d or 2-d), resonant transmission peaks occur when total electron energy equals any miniband energy. Unit transmission probability is approached when the scattering defect is small, and far from other scatterers, even if the scatterer is strong enough to decrease significantly the conductance away from resonance. Both numerical and analytical methods are used. Resonances occur for all shapes of confining potential.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alfred M. Kriman, Alfred M. Kriman, B. S. Haukness, B. S. Haukness, David K. Ferry, David K. Ferry, } "Electron-waveguide transmission resonance at a defect", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20777; https://doi.org/10.1117/12.20777
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