1 October 1990 Fabrication of GaAs nanometer scale structures by dry etching
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Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20783
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Nanometer-sized features as small as 400Ahave been fabricated in single-quantum-well GaAs/A1GaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-sized etch masks by a novel surface deposition of colloidally-suspended spherical particles. SEM was used to examine the feature size.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsuro Iwabuchi, Tatsuro Iwabuchi, Chih-Li Chuang, Chih-Li Chuang, Galina Khitrova, Galina Khitrova, Mial E. Warren, Mial E. Warren, Arturo Chavez-Pirson, Arturo Chavez-Pirson, Hyatt M. Gibbs, Hyatt M. Gibbs, Dror Sarid, Dror Sarid, Mark J. Gallagher, Mark J. Gallagher, } "Fabrication of GaAs nanometer scale structures by dry etching", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20783; https://doi.org/10.1117/12.20783
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