1 October 1990 Interface structural characterization of strained-layer (001) SimGen superlattices by Raman spectroscopy
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Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20790
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Vibrational modes of the buried interfacial regions in strained layer SimGen SL's have been studied by Raman spectroscopy. The distinct but weak excitations depend on the strain distribution and are suggested to be related to localized modes of Si0.5Ge0.5 alloy layers at the interfaces. An extended annealing study is presented showing how these excitations become more pronounced as the interfaces are broadened. Long range order has been found by ThM in contrast to Raman scattering.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfgang S. Bacsa, Manfred Ospelt, J. Henz, H. von Kaenel, E. Mueller, P. Wachter, "Interface structural characterization of strained-layer (001) SimGen superlattices by Raman spectroscopy", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20790; https://doi.org/10.1117/12.20790
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