1 October 1990 Ion etching of ultranarrow structures
Author Affiliations +
Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20784
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We describe the use of Polymethylmethacrylate as both electron beam sensitive resist and ion etch mask for high-resolution pattern transfer. By using high-resolution electron beam lithography, chemically assisted ion beam etching, and in-situ metallization, we have fabricated ultra-narrow gates with lateral dimensions below 20 nm, spaced with < 50 nm pitch on high mobility 2D electron gas material. This technique, which is thought to provide extremely small lateral electron depletion lengths and well defined confienement potentials, allows us to produce new and more complicated structures for the study of quantum transport.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Axel Scherer, Axel Scherer, B. P. Van der Gaag, B. P. Van der Gaag, } "Ion etching of ultranarrow structures", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20784; https://doi.org/10.1117/12.20784
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

In Situ MBE Regrowth of Ion Beam Etched GaAs A1GaAs...
Proceedings of SPIE (August 15 1988)
Microfabrication below 10 nm
Proceedings of SPIE (September 30 1990)
Mask patterning for the 22nm node using a proton multi...
Proceedings of SPIE (October 19 2008)

Back to Top