1 October 1990 Temperature dependence of electron beam induced current and cathodoluminescence contrast of dislocations in GaAs
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Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990); doi: 10.1117/12.20795
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Electron Beam Induced Current (EBIC) and Cathodoluminescence (CL) contrast of dislocations in GaAs show a strong temperature dependence. This is not only due to a variation of the recombination properties of the defects, which are a function of the defect energy level in the gap, but also due to the variation of diffusion length with temperature and their absolute value, which depends on doping type and doping concentration of the material. The experimental results are interpreted in the framework of model calculations for defect contrast and indicate a decreasing diffusion length and increasing recombination efficiency of dislocations with decreasing temperature in the range of 20 to 300 K.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Eckstein, Abram Jakubowicz, Michael Bode, Hanns-Ulrich Habermeier, "Temperature dependence of electron beam induced current and cathodoluminescence contrast of dislocations in GaAs", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20795; https://doi.org/10.1117/12.20795
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KEYWORDS
Temperature metrology

Gallium arsenide

Diffusion

Semiconductors

Doping

Electron beams

Luminescence

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