1 October 1990 Theory of ballistic electron transport through parallel nanoconstrictions
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Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20779
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Quantum-mechanical model calculations of the conductance G of two parallel ballistic constrictions joining two two-dimensional electron gases show that G is nearly additive. This is due to the continuous distribution of incident modes and the collimation along the constrictions, and is almost independent of the width, length, Fermi energy and detailed shape of the constrictions. Due to coherence effects, the additivity breaks down, but only weakly so, when the constrictions are contiguous and very short and wide.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eleuterio Castano, Eleuterio Castano, George Kirczenow, George Kirczenow, "Theory of ballistic electron transport through parallel nanoconstrictions", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20779; https://doi.org/10.1117/12.20779
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