1 October 1990 Application of x-ray scattering to the in-situ study of organometallic vapor phase epitaxy
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Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20803
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Using a new in situ analysis tool, grazing incidence x-ray scattering, we have studied the surface reconstructions present prior to and during growth of ZnSe by organometallic vapor phase deposition. We have established that the GaAs native oxide is chemically reduced by the hydrogen ambient present during pre-growth heating. Following this cleaning procedure, the growth of ZnSe was found to occur in the presence of a p(2x1) reconstruction, characteristic of an array of Se dimers. This new technique can easily be extended to other growth systems.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David W. Kisker, Paul H. Fuoss, Goullioud Renaud, K. L. Tokuda, Sean Brennan, J. L. Kahn, "Application of x-ray scattering to the in-situ study of organometallic vapor phase epitaxy", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20803; https://doi.org/10.1117/12.20803
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