1 October 1990 Band alignment of Zn1-xCdxTe/ZnTe and ZnTe1-xSex/ZnTe strained layer superlattices
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Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20829
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We present photoluminescence spectra from CdZnj_Te /ZnTe and ZnSe,,Tei_ /ZnTe strained layer superlattices grown by MBE, and analyze the band alignments and strain effects. Our results are based on fitting the dominant photoluminescence peaks to the superlattice band structure obtamed by k •theory. We find that the valence band offset of the CdZniTe /ZnTe system is quite small. On the other hand, the photoluminescence data from the ZnSeTei_ /ZnTe superlattices suggest that the band alignment is type II, with a large valence band offset. We also investigate the band gap bowing in the ZnSeTej_ alloys, and determine the individual components of the bowing in valence and conduction bands. Based on our results for band alignments, we evaluate the prospects for minority carrier injection in wide bandgap heterostructures based on ZnSe, ZnTe, and CdTe.
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Yasantha Rajakarunanayake, Yasantha Rajakarunanayake, Mark C. Phillips, Mark C. Phillips, James O. McCaldin, James O. McCaldin, David H. Chow, David H. Chow, D. A. Collins, D. A. Collins, Thomas C. McGill, Thomas C. McGill, } "Band alignment of Zn1-xCdxTe/ZnTe and ZnTe1-xSex/ZnTe strained layer superlattices", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20829; https://doi.org/10.1117/12.20829
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