Chemical beam epitaxial growth of GaAs and InAs

Tien-Heng H. Chiu; Alexander J. Robertson Jr.

doi:10.1117/12.20812

1 October 1990 Chemical beam epitaxial growth of GaAs and InAs

Tien-Heng H. Chiu, Alexander J. Robertson Jr.

Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20812
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Growth characteristics of GaAs using triethyl-Ga (TEGa) and trimethyl-Ga (TMGa), and of InAs using trimethyl-In (ThIn) are found to be quite similar in many aspects. A reaction model in which the chemical kinetics of the adsorbed Ga alkyls dominates is able to account for the growth characteristics using TEGa throughout the entire growth temperature range. The existence of the intermediate species assumed in this model is confirmed by a recent mass spectroscopic study. This reaction model discussed here provides a microscopic understanding of the chemical beam epitaxial growth process.

Citation Download Citation

Tien-Heng H. Chiu and Alexander J. Robertson Jr. "Chemical beam epitaxial growth of GaAs and InAs", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20812

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