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1 October 1990 Growth of ZnTe and ZnSexTe1-x epilayers and superlattices on GaSb
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Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20830
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We present photoluminescence (PL) from Te-rich ZnSeTei_ alloys and ZnSeTei_/ZnTe superlattices and discuss the growth of these materials on GaSb epilayers on GaSb substrates. We show that growing ZnTe on GaSb substrates eliminates several bound exciton peaks which occur in ZnTe grown on GaAs. The ZnSeTei_ epilayers show bright luminescence from centers over 100 meV below the expected band edge. PL from ZnSeTe1_ alloys and superlattices is qualitatively very different from PL from CdZni.Te alloys and CdZniTe/ZnTe superlattices .
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark C. Phillips, Yasantha Rajakarunanayake, James O. McCaldin, David H. Chow, D. A. Collins, and Thomas C. McGill Jr. "Growth of ZnTe and ZnSexTe1-x epilayers and superlattices on GaSb", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20830
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