Translator Disclaimer
1 October 1990 Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison
Author Affiliations +
Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20810
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Transition metal aluminides and gallides and rare earth monopnictides have been grown as buried conducting layers in 111-v compound semiconductor heterostructures. These metallic and semi-metallic compounds have the CsC1 and NaC1 structures, respectively. The criteria for achieving (100) oriented epitaxial growth on (100)111-V semiconductor surfaces are different for each class of material. The methods used to achieve 111-V/metal/Ill-V heteroepitaxial structures are described. The different approaches needed for the aluminides or gallides and the monopnictides form the basis for a comparative study.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris J. Palmstrom, Tim D. Sands, James P. Harbison, T. G. Finstad, Suzanne Mounier, Leigh T. Florez, Vassilis G. Keramidas, Jane G. Zhu, and C. B. Carter "Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20810
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top