Influence of rapid thermal annealing parameters on properties of YBaCuO thin films sputtered on silicon-based substrates

Joseph M. Baixeras; Francois Carrie; Ferechteh Hosseini Teherani; Alain J. Kreisler

doi:10.1117/12.20827

1 October 1990 Influence of rapid thermal annealing parameters on properties of YBaCuO thin films sputtered on silicon-based substrates

Joseph M. Baixeras, Francois Carrie, Ferechteh Hosseini Teherani, Alain J. Kreisler

Author Affiliations +

Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20827
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

In order to optimize the performances of YBaCuO thin films, elaborated by a two step process on Si02/Si3N4/Si substrates, we have studied the effect of rapid thermal annealing (FI'A) conditions on low temperature (i.e. < 200°C) sputtered layers, in the thickness range 0.3 - 1.5 gin. Both the superconduc- ting properties and the surface quality of the layers have been investigated. One of the advantages of this process is to allow the use of a very thin nitride layer (i.e. 45 A), to avoid the harmful diffusion of silicon from the wafer. This fast technique is also efficient to prevent interdiffusion between the silica and YBaCuO layers. Our first results show that an onset temperaure in the 87-91K range can been obtained, with 60 K and 'c 500 AOlfl (at T(R..0)/2). It is also shown that these figures might be improved by repeated RTA cycles.

Citation Download Citation

Joseph M. Baixeras, Francois Carrie, Ferechteh Hosseini Teherani, and Alain J. Kreisler "Influence of rapid thermal annealing parameters on properties of YBaCuO thin films sputtered on silicon-based substrates", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20827

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