1 October 1990 Measurement of the strain dependence of the Si/Ge (100) valence band offset
Author Affiliations +
Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20822
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We have used x-ray photoelectron spectroscopy (XPS) to measure the valence band offset in situ for coherently strained Si/Ge (100) heterojunctions grown by molecular beam epitaxy. Si 2p and Ge 3d core level to valence band edge binding energies and Si 2p to Ge 3d core level energy separations were measured as functions of strain, and strain configurations in all samples were determined using x-ray diffraction. We obtain valence band offsets of 0.83 :f: 0.11 eV and 0.22 0.13 eV for Ge coherently strained to Si (100) and Si coherently strained to Ge (100), respectively. If we assume that the offset between the weighted averages of the light-hole, heavy-hole, and spin-orbit valence bands in Si and Ge is independent of strain, we obtain a discontinuity in the average valence band edge of 0.49 0.13 eV.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edward T. Yu, Edward T. Yu, Edward T. Croke, Edward T. Croke, Thomas C. McGill, Thomas C. McGill, Richard H. Miles, Richard H. Miles, } "Measurement of the strain dependence of the Si/Ge (100) valence band offset", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20822; https://doi.org/10.1117/12.20822
PROCEEDINGS
8 PAGES


SHARE
Back to Top