1 October 1990 Pulsed excimer laser deposition of high Tc superconductor thin films on Si with and without oxide barrier
Author Affiliations +
Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20826
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
High T 1.2-3 superconductor thin films have been deposited on (001) single crystal Si with and without oxide bather by pulsed excimer laser evaporation technique. The oxide barrier of Zr02 was also deposited by the same laser technique. It is shown that the quality of superconductor film and the corresponding transition depend on the quality of the barrier layer. Low angle X-ray diffraction and IR transmission results have been used to identify the structural quality of the barrier layer. The superconducting films have been characterized using X-ray diffraction and resistivity-temperature measurements. T0 of 87K has been achieved in O.7p.m thick high T films on Si with O.3p.m thick Z102 barrier deposited at 600°C.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. D. Vispute, R. D. Vispute, S. T. Bendre, S. T. Bendre, R. R. Viswanathan, R. R. Viswanathan, S. M. Chaudhari, S. M. Chaudhari, S. M. Kanetkar, S. M. Kanetkar, Satish B. Ogale, Satish B. Ogale, } "Pulsed excimer laser deposition of high Tc superconductor thin films on Si with and without oxide barrier", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20826; https://doi.org/10.1117/12.20826
PROCEEDINGS
8 PAGES


SHARE
Back to Top