1 October 1990 Wide graded potential wells: growth, electrical properties and theoretical results
Author Affiliations +
Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20808
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Remotely doped parabolic quantum wells have been grown by MBE using a digital alloy approach to vary the Al content in the AlGai.As system. The monitoring of the beam fluxes as well as the measured subband separations confirm the precision of our growth technique. Using a front gate electrode we can depopulate the electrical subbands. Thus we can determine experimentally the subband separations showing close agreement with the results of our self-consistent calculations.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Klaus Ensslin, Klaus Ensslin, Achim Wixforth, Achim Wixforth, Mani Sundaram, Mani Sundaram, John H. English, John H. English, Arthur C. Gossard, Arthur C. Gossard, } "Wide graded potential wells: growth, electrical properties and theoretical results", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20808; https://doi.org/10.1117/12.20808
PROCEEDINGS
10 PAGES


SHARE
Back to Top