1 August 1990 Absorption and electroabsorption spectra of InGaAs/InAlAs quantum wells and superlattices
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20854
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
InGaAs/InAlAs quantum wells provide large barrier height for electrons accommodating numerous confined states. Absorption and electroabsorption spectra of samples with 50 - 100 wells are compared. Heavy hole excitons respond strongly to the electric field which for the lowest state is in good agreement with the predicted red shift due to the quantum confined Stark effect. Higher confined excitons show spectra of similar strength and lineshape but not because of a red shift of the transitions but due to redistribution of oscillator strength. Superlattices with thin barriers develop minibands whose spectra are very different from those of uncoupled wells. Features arising from M0 and M1 singularities enable direct determination of the width of the minibands and determination of the conduction band disontinuity. Large electric fields destroy the minibands and quantum confined excitons reappear.
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Klaus Satzke, Wolfgang Stolz, and Gerhard Weiser "Absorption and electroabsorption spectra of InGaAs/InAlAs quantum wells and superlattices", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20854; https://doi.org/10.1117/12.20854

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