1 August 1990 Characterization of InGaAs/InGaAsP broad-area quantum well lasers
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20869
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Electric fields alter the optical properties of the various layers in a quantum well laser by the Franz-Keldysh effect or by the quantum confined Stark effect. The resulting features of an electroabsorption spectrum obtained by combination of dc and ac fields are characteristic for confined and unconfined states and allow the determination of transition energies, band gaps of bulk layers, internal fields and homogeneity of the sample. The results of two structures of different barrier height are compared with luminescence and photocurrent data and with model calculations.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerhard Weiser, Gerhard Weiser, Klaus Satzke, Klaus Satzke, H. G. Vestner, H. G. Vestner, L. Goldstein, L. Goldstein, A. Perales, A. Perales, } "Characterization of InGaAs/InGaAsP broad-area quantum well lasers", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20869; https://doi.org/10.1117/12.20869
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