Determination of electronic structure of Ge-Si nanostructures by electroreflectance spectroscopy

Thomas P. Pearsall

doi:10.1117/12.20874

1 August 1990 Determination of electronic structure of Ge-Si nanostructures by electroreflectance spectroscopy

Thomas P. Pearsall

Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20874
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Extensive measurements and theoretical calculations have provided strong evidence for the creation of direct bandgap superlattice structures from indirect bandgap Ge and Si. Much of the experimental evidence for this conclusion is drawn from electroreflectance measurements. Interpretation of this experiment begins with the standard lineshape fitting analysis, but it is complicated by local electric fields and interference effects. We will discuss these effects and how they can be separated from properties intrinsic to the electronic structure.

Citation Download Citation

Thomas P. Pearsall "Determination of electronic structure of Ge-Si nanostructures by electroreflectance spectroscopy", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20874

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