The electroreflectance lineshapes of 111/V semiconductors are modelled using the intermediate
field theory and a multilayer reflection routine to include electric field variation. This
introduces additional structure into the lineshape, which has previously been assumed to be from
impurity or exciton effects. By using a thermal broadening parameter of F0=O.OO9eV we show that
spectrum size as well as shape can be fitted successfully to experimental data so that depletion
layer voltages can be measured.
Richard A. Batchelor,
"Developments in electroreflectance lineshape theory", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20876; https://doi.org/10.1117/12.20876