1 August 1990 Developments in electroreflectance lineshape theory
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20876
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The electroreflectance lineshapes of 111/V semiconductors are modelled using the intermediate field theory and a multilayer reflection routine to include electric field variation. This introduces additional structure into the lineshape, which has previously been assumed to be from impurity or exciton effects. By using a thermal broadening parameter of F0=O.OO9eV we show that spectrum size as well as shape can be fitted successfully to experimental data so that depletion layer voltages can be measured.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Batchelor, Andrew Hamnett, "Developments in electroreflectance lineshape theory", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20876; https://doi.org/10.1117/12.20876
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