1 August 1990 Developments in electroreflectance lineshape theory
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20876
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The electroreflectance lineshapes of 111/V semiconductors are modelled using the intermediate field theory and a multilayer reflection routine to include electric field variation. This introduces additional structure into the lineshape, which has previously been assumed to be from impurity or exciton effects. By using a thermal broadening parameter of F0=O.OO9eV we show that spectrum size as well as shape can be fitted successfully to experimental data so that depletion layer voltages can be measured.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Batchelor, Richard A. Batchelor, Andrew Hamnett, Andrew Hamnett, } "Developments in electroreflectance lineshape theory", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20876; https://doi.org/10.1117/12.20876
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