1 August 1990 Differential reflectance spectroscopy of semiconductors
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20845
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Differential reflectance (DR) spectroscopy, applied to semiconductors, is shown to be equivalent in some cases to a contactless electro-reflectance technique. DR spectra are achieved by modifying one half of the sample surface or, in the case of semiconductor alloys, just relying on the inhomogeneities present. Our DR spectra of GaAs reveal sharp critical point structures and are comparable to the known electro-reflectance data. The DR spectra show a marked improvement in signal to noise ratio over photoreflectance spectra of the same samples. This new technique has also been used to characterize 111-V quantum well structures.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Gal, Chit Shwe, John Tann, P. McMillan, Mark Gross, R. Shi, "Differential reflectance spectroscopy of semiconductors", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20845; https://doi.org/10.1117/12.20845
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