1 August 1990 Electroabsorption study of lattice mismatch in InGaAsP/InP heterostructures
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20862
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Low field electroabsorption spectra are compared with absorption spectra and are used to determine accurately the band gap. The spectra show for larger fields F numerous Franz-Keldysh oscillations above the absorption edge which shift in perfect agreement with theory. This shift allows determination of built-in fields and the actual field-strength in the sample. Lattice mismatch removes the valence band degeneracy and causes for fractional change of the lattice constant za/a < 0 splitting into a doublet of the electroabsorption spectrum at small fields. The splitting disappears at higher fields and is never observed for La/a > 0. This different behaviour probably results from differences of the band structure in field direction.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerhard Weiser, Gerhard Weiser, R. Weihofen, R. Weihofen, G. G. Baumann, G. G. Baumann, } "Electroabsorption study of lattice mismatch in InGaAsP/InP heterostructures", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20862; https://doi.org/10.1117/12.20862
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