1 August 1990 Electronic transitions in a Ge-rich strain-symmetrized Si8Ge32 superlattice measured by photoreflectance spectroscopy
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20860
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Using photoreflectance spectroscopy, fifteen electronic transitions have been measured from a 60 period Si8Ge32 superlattice grown on a Si02Ge0•8 buffer layer on < 100 > Si. The superlattice transitions fit well to a third derivative functional form and most of their energies were determined using a one band envelope-function model, including strain effects. The temperature dependences of the E0 transition in bulk Ge and in the Si8Ge32 superlattice were also fit to a nonlinear functional form.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philip A. Dafesh, Kang Lung Wang, "Electronic transitions in a Ge-rich strain-symmetrized Si8Ge32 superlattice measured by photoreflectance spectroscopy", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20860; https://doi.org/10.1117/12.20860
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