1 August 1990 Optical transitions in Si:Ge monolayer superlattices from derivative ellipsometry spectra
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20875
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Optical transitions in the range I .9—4.3eV have been observed in Si:Ge superlattices by spectroscopic ellipsometry (SE) and electron—beam electroreflectance (EBER). Interference is shown to play an important role in both techniques, leading to complications in • interpretation. Strong features may be produced both by multiple reflections from capping layers and from buried growth imperfections.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher Pickering, Christopher Pickering, Derek C. Houghton, Derek C. Houghton, Jean-Marc Baribeau, Jean-Marc Baribeau, } "Optical transitions in Si:Ge monolayer superlattices from derivative ellipsometry spectra", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20875; https://doi.org/10.1117/12.20875
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