1 August 1990 Photoreflectance at elevated temperatures
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20844
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Using the contactiess modulation spectroscopy technique of photoreflectance, the temperature variations of the direct gap E0 of GaAs, InP, GaA1As, InGaAs have been measured at elevated temperatures up to 600°C. The parameters which describe the temperature dependence of the band gap energies have been evaluated. The ability to measure the band gap at elevated temperatures opens up many new possibilities for in-situ monitoring of MBE and MOCVD processes. In this paper, we review some of the recent developments in the use of photoreflectance at elevated temperatures.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongen Shen, Hongen Shen, } "Photoreflectance at elevated temperatures", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20844; https://doi.org/10.1117/12.20844
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