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1 August 1990 Photoreflectance characterization of built-in potential in MBE-produced As-grown GaAs surface
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Proceedings Volume 1286, Modulation Spectroscopy; (1990)
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Photoreflectance (PR) spectroscopy has been used to study the built-in surface potential in GaAs epitaxial film grown by molecular beam epitaxy (MBE). The PR signal amplitude ILIR/RI sensitively depends on modulation light power, built-in surface potential and temperature. From the analysis of the modulation light power dependence of IzlR/RI, the built-in surface potential of 0.47±0.09eV was determined for a MBE-grown GaAs(lOO) epitaxial film, and the increase of the surface potential by gold deposition was observed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Kanata-Kito, Masayuki Matsunaga, Hideyuki Takakura, Yoshihiro Hamakawa, and Taneo Nishino "Photoreflectance characterization of built-in potential in MBE-produced As-grown GaAs surface", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990);

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