1 August 1990 Photoreflectance characterization of built-in potential in MBE-produced As-grown GaAs surface
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20837
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Photoreflectance (PR) spectroscopy has been used to study the built-in surface potential in GaAs epitaxial film grown by molecular beam epitaxy (MBE). The PR signal amplitude ILIR/RI sensitively depends on modulation light power, built-in surface potential and temperature. From the analysis of the modulation light power dependence of IzlR/RI, the built-in surface potential of 0.47±0.09eV was determined for a MBE-grown GaAs(lOO) epitaxial film, and the increase of the surface potential by gold deposition was observed.
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Takashi Kanata-Kito, Takashi Kanata-Kito, Masayuki Matsunaga, Masayuki Matsunaga, Hideyuki Takakura, Hideyuki Takakura, Yoshihiro Hamakawa, Yoshihiro Hamakawa, Taneo Nishino, Taneo Nishino, } "Photoreflectance characterization of built-in potential in MBE-produced As-grown GaAs surface", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20837; https://doi.org/10.1117/12.20837
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