1 August 1990 Photoreflectance of GaAs/AlGaAs hetero n-i-p-i structures
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Proceedings Volume 1286, Modulation Spectroscopy; (1990); doi: 10.1117/12.20863
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We report results of photoreflectance (PR) investigations of GaAs/Alo.3Gao.7As hetero-n-i-p-i crystals with either GaAs-QWs ("type II") in the intrinsic region or GaAs-QWs interspersed in the n-region ("type I"). To understand the complex PR-spectra of these samples we changed several measurement parameters such as ac-pump-intensity, dc-pump-intensity, pump frequency and temperature. Especially the spectra of type II showed a strong temperature dependence. We compare these spectra to spectra calculated with the model of an infinite quantum well in an electric field. Because of the dielectric function being periodic in space the z-dependence of the dielectric function is taken into account.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ulrich D. Keil, Michael Forkel, Norbert Linder, Klaus H. Schmidt, Gottfried H. Doehler, Jeffrey N. Miller, "Photoreflectance of GaAs/AlGaAs hetero n-i-p-i structures", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20863; https://doi.org/10.1117/12.20863
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KEYWORDS
Quantum wells

Electrons

Gallium arsenide

Dielectrics

Absorption

Modulation

Spectroscopy

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