1 August 1990 Photoreflectance of doped GaAs beyond the band gap
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20867
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We report photoreflectance studies ofMOCVD grown doped GaAs at the higher energy transition E1( 2.9 eV). We are especially interested in the variation ofboth the energy position and the broadening parameter F of the E1 transition with doping concentration. Above 1 x 10'8cin3 for Si:GaAs and ' 7 X 1018 for Zn:GaAs, we observe an increasing overlap of B1 and E1 + Li structures. Evaluation of r based on curve fitting of the KramersKronig analysed data shows a nearly linear relation between F and the logarithm of carrier concentration. This observation has potential application in the determination of carrier concentration for heavily doped films.
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Alireza Badakhshan, Alireza Badakhshan, Robert Glosser, Robert Glosser, Steve Lambert, Steve Lambert, "Photoreflectance of doped GaAs beyond the band gap", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20867; https://doi.org/10.1117/12.20867
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