1 August 1990 Photoreflectance studies of InGaAs/InP superlattices
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20851
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Photoreflectance measurements of InGaAs/InP superlattices grown by solid source molecular beam epitaxy show a well resolved ground state exciton and some of the higher confined transitions in the quantum wells. Ground state splitting possibly due to one monolayer variations in the layer thicknesses is observed. Strong unconfined transitions below the InP band gap are due to arsenic doping of the barriers caused by small amounts of arsenic leakage from the evaporation sources during the epitaxy.
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Veli-Matti Airaksinen, Veli-Matti Airaksinen, Harri K. Lipsanen, Harri K. Lipsanen, P. Ravila, P. Ravila, Turkka O. Tuomi, Turkka O. Tuomi, P. A. Claxton, P. A. Claxton, "Photoreflectance studies of InGaAs/InP superlattices", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20851; https://doi.org/10.1117/12.20851
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