1 August 1990 Photoreflectance surface characterization of InP:Fe substrates
Author Affiliations +
Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20873
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Photoreflectance (PR) was used to determine the surface damage caused by polishing on semi-insulating lnP:Fe substrates. PR measurements were performed between subsequent etching steps. The PR results on substrates, obtained from various vendors and laboratories, indicate that the exciton structure near the fundamental absorption edge transition is very sensitive to surface imperfections and the bulk resistivity of the substrates.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alok K. Berry, Alok K. Berry, D. Kurt Gaskill, D. Kurt Gaskill, N. Bottka, N. Bottka, } "Photoreflectance surface characterization of InP:Fe substrates", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20873; https://doi.org/10.1117/12.20873

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