1 August 1990 Piezoreflectance investigations of narrow-barrier single quantum wells
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20857
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We report investigations of layered structures whose modulated reflectance spectra not only have features that suggest the occurrence of spatially indirect transitions but also display anomalous electric field effects. The spatially indirect transitions can occur from either the GaAs conduction or valence band to quantum levels of carriers confined between narrow potential barriers. In addition to the usual band-to-band excitonic transitions, we discuss spatially direct transitions between the conduction band and the two-dimensional hole states that exist in a spacer layer separating heavily-doped GaAs regions from AlGa1_As barriers. Finally, we comment on spectral lineshapes asssociated with built-in electric fields that differ from those predicted using Franz-Keldysh theory. The energies of all transitions are compared with those calculated using potential profiles based upon the growth parameters.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard L. Tober and John D. Bruno "Piezoreflectance investigations of narrow-barrier single quantum wells", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20857; https://doi.org/10.1117/12.20857
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