1 August 1990 Study of GaAs/AlGaAs and InGaAs/InP quantum well structures using low-field transverse electroreflectance
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20858
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We have employed the transverse electroreflectance technique to characterize multiple quantum well structures. A weak modulating electric field (1-100 V/cm) was applied transversally to the probe light beam, i.e., parallel to the quantum well layers. Photoreflectance and in-plane photoconductivity spectra can also be measured with this configuration. The transition energies measured were closely the same as those obtained from the photoreflectance and Schottky barrier electroreflectance spectra. The method can be applied for relatively highly resistive undoped layers grown on semi-insulating substrates. The modulation mechanism in transverse electroreflectance is not well understood.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harri K. Lipsanen, Veli-Matti Airaksinen, Turkka O. Tuomi, P. A. Claxton, "Study of GaAs/AlGaAs and InGaAs/InP quantum well structures using low-field transverse electroreflectance", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20858; https://doi.org/10.1117/12.20858
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