1 August 1990 Temperature dependence of the energy gap of (GaAs)n/(AlAs)n superlattices
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20852
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Photoreflectance and photoluminescence experiments are carrIed out in (GaAs)/(AlAs) (n = 1-15) in the temperature range from 25 to 275 K. Weak signals of photoreflectance associated with the critical point of the pseudodirect transition, weakly allowed direct transition arising from the zone-folding effect, have been found as well as main signals associated with the direct allowed transitions. This assignment is supported by the temperature dependence of the photoluminescence intensity, which gives the transition probability ratio of the direct allowed to pseudodirect transition about 102. Temperature dependence of the critical point energies and luminescence peak energies shows a similar behavior to bulk semiconductors. These observations show also that the monolayer number n for which the crossover of direct and pseudodirect transitions occurs depends on temperature. In addition the broadening parameters determined from photoreflectance spectra are found to be almost independent of temperature and depend on the monolayer number n, which may be explained in terms of broadening induced by the layer number fluctuation.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Nakazawa, Takeshi Nakazawa, Toshimasa Matsuoka, Toshimasa Matsuoka, Tomoki Ohya, Tomoki Ohya, Kenji Taniguchi, Kenji Taniguchi, Chihiro Hamaguchi, Chihiro Hamaguchi, Hiromu Kato, Hiromu Kato, Yasutaka Watanabe, Yasutaka Watanabe, "Temperature dependence of the energy gap of (GaAs)n/(AlAs)n superlattices", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20852; https://doi.org/10.1117/12.20852
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