Ultra-wide-aperture diode lasers with high brightness through use of buried periodic current structuring

B. King; S. Arslan; P. Della Casa; D. Martin; A. Boni; P. S. Basler; A. Thies; A. Knigge; P. Crump

doi:10.1117/12.3005647

12 March 2024 Ultra-wide-aperture diode lasers with high brightness through use of buried periodic current structuring

B. King, S. Arslan, P. Della Casa, D. Martin, A. Boni, P. S. Basler, A. Thies, A. Knigge, P. Crump

Proceedings Volume 12867, High-Power Diode Laser Technology XXII; 128670S (2024) https://doi.org/10.1117/12.3005647
Event: SPIE LASE, 2024, San Francisco, California, United States

Abstract

We report progress in the development of GaAs-based laser diodes with ultra-wide stripe widths of W = 1200 μm emitting at a wavelength of λ = 915 nm. In order to restrict ring oscillations and higher order modes in these ultra-wide devices we utilise periodic current structuring with a period of 29 μm and width of 20 μm. We compare the performance of a device with current structuring realised through contact layer implantation of the device after epitaxial growth, termed a 'Contact Implant' laser, and a device with buried current structuring close to the active region of the device realised using two step epitaxial regrowth and Buried-Regrown-Implant-Structure (BRIS) technology, termed a 'BRIS' laser. Quasi-Continuous Wave (QCW) measurement of the devices show that both the 'Contact Implant' and 'BRIS' laser achieve a very high peak output power of Popt = 200 W at a power conversion efficiency of ηE = 59% and ηE = 52%, respectively, with a peak efficiency of around 70%. QCW beam-quality measurements show that the 'BRIS' laser has a much reduced 95% power content far-field angle of 9°, compared to 12.7° for the 'contact implant' laser, at a power of P_opt = 100 W. Under Continuous Wave (CW) operation the 'contact implant' laser reaches an output power of P_opt = 68 W at ηE = 57% and the 'BRIS' laser reaches P_opt = 53 W at ηE = 50%, but with a reduced far-field angle of 11.9° at P_opt = 40 W for the 'BRIS' laser.

Conference Presentation

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B. King, S. Arslan, P. Della Casa, D. Martin, A. Boni, P. S. Basler, A. Thies, A. Knigge, and P. Crump "Ultra-wide-aperture diode lasers with high brightness through use of buried periodic current structuring", Proc. SPIE 12867, High-Power Diode Laser Technology XXII, 128670S (12 March 2024); https://doi.org/10.1117/12.3005647

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