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We present a passively mode-locked monolithic diode laser operating at 780 nm. It features a tapered gain section serving as a power booster and generates ultrashort pulses (~8 ps) with a peak power of approximately 45 W and a repetition rate of 6.6 GHz. The estimated beam propagation ratio is less than 1.3. This diode laser is intended as a compact and cost-efficient alternative to Ti:sapphire lasers for use in two-photon-polymerization-based 3D-printing systems.
S. Wohlfeil,H. Christopher,J. Fricke,P. Della Casa,A. Maaßdorf,H. Wenzel, andA. Knigge
"Passively mode-locked monolithic diode lasers with a tapered gain section generating picosecond pulses with 45 W peak power at 780 nm", Proc. SPIE 12867, High-Power Diode Laser Technology XXII, 128670T (13 March 2024); https://doi.org/10.1117/12.3002428
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S. Wohlfeil, H. Christopher, J. Fricke, P. Della Casa, A. Maaßdorf, H. Wenzel, A. Knigge, "Passively mode-locked monolithic diode lasers with a tapered gain section generating picosecond pulses with 45 W peak power at 780 nm," Proc. SPIE 12867, High-Power Diode Laser Technology XXII, 128670T (13 March 2024); https://doi.org/10.1117/12.3002428