1 October 1990 Barium diffusion in metallo-organic solution deposited barrier layers and Y1Ba2Cu3O7-x films
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Proceedings Volume 1287, High Tc Superconductivity: Thin Films and Applications; (1990) https://doi.org/10.1117/12.20900
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Barium silicate and barium aluminate films were studied for use as chemical reaction and diffusion barrier layers for Y1Ba2CuO7 (YBC) deposited on sapphire and fused silica substrates by the sol-gel technique. Depth profiling by secondary ion mass spectrometry (SIMS) was used to characterize the abruptness of the interfaces between the barrier layer and the YBC film as well as the barrier layer and the substrate. We found that barium aluminate films reacted with fused silica substrates forming a coarse-grained barium silicate phase. Barium silicate, BaSiO3, also reacted with silica substrates forming a broad, amorphous reaction zone containing some BaSi2O5. Although barium silicate and barium aluminate deposited on sapphire formed a BaA112O19 phase, they provided a barrier to barium diffusion from sol-gel deposited YBC. Crystalline barium aluminate grown on c-cut sapphire was the most effective barrier layer for the growth of YBC films; compositionally uniform YBC films were made similar to that grown on strontium titanate substrates. These data show that chemically stable, crystalline films are more effective barrier layers than amorphous films.
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Russell A. Lipeles, Russell A. Lipeles, David A. Thiede, David A. Thiede, Martin S. Leung, Martin S. Leung, "Barium diffusion in metallo-organic solution deposited barrier layers and Y1Ba2Cu3O7-x films", Proc. SPIE 1287, High Tc Superconductivity: Thin Films and Applications, (1 October 1990); doi: 10.1117/12.20900; https://doi.org/10.1117/12.20900
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