1 October 1990 Preparation and properties of YBa2Cu3O7-x thin-film SQUIDs
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Proceedings Volume 1287, High Tc Superconductivity: Thin Films and Applications; (1990) https://doi.org/10.1117/12.20885
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Thin films of YBa2Cu3O7_ deposited by ion-beam sputtering on yttria-stabilised zirconia (YSZ) substrates at room temperature have been lithographically patterned to form dc SQUID structures. Weak links are formed by naturally-occurring grain boundaries during annealing f the previously patterned films. These devices function either by he collective action of an array of weak links or by the action of a few dominating ones. Using a flux-locked-loop feedback circuit, we have obtained an upper limit for the SQUID noise of 1.5 x iO of the flux quantum per root Hz at 100 Hz in a SQUID of inductance 60 pH perating in liquid nitrogen. Critical currents averaged over the weak link cross-section are greater than iO" A/cm2 at 77 K. The performance of these devices is strongly dependent on temperature in the range 64-80 K. In this paper, we describe the preparation and properties of YBa2Cu3O7_ thin ifims and SQUID devices, and discuss further developments needed to improve the operating characteristics of these devices.
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Catherine P. Foley, Catherine P. Foley, S. W. Filipczuk, S. W. Filipczuk, John C. Macfarlane, John C. Macfarlane, David L. Dart, David L. Dart, R. Driver, R. Driver, } "Preparation and properties of YBa2Cu3O7-x thin-film SQUIDs", Proc. SPIE 1287, High Tc Superconductivity: Thin Films and Applications, (1 October 1990); doi: 10.1117/12.20885; https://doi.org/10.1117/12.20885
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