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GaAs heterojunction bipolar transistor device and IC technology for high-performance analog/microwave, digital, and A/D conversion applications
Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15-um gate length
Effect of InAlAs emitter on the microwave performance of InAlAs/InGaAs abrupt npn heterojunction bipolar transistor
Self-aligned resonant tunneling-diode finger structure for high cut-off frequency and device integration
Current-voltage characteristics of MBE-grown strained Si1-xGex/Si heterojunction diodes and their temperature dependence