PROCEEDINGS VOLUME 1288
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS | 17-21 MARCH 1990
High-Speed Electronics and Device Scaling
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS
17-21 March 1990
San Diego, CA, United States
Opening Session
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 2 (1 August 1990); doi: 10.1117/12.20902
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 9 (1 August 1990); doi: 10.1117/12.20903
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 21 (1 August 1990); doi: 10.1117/12.20904
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 30 (1 August 1990); doi: 10.1117/12.20905
Heterojunction Bipolar Transistors (HBTs)
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 44 (1 August 1990); doi: 10.1117/12.20906
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 57 (1 August 1990); doi: 10.1117/12.20907
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 69 (1 August 1990); doi: 10.1117/12.20908
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 78 (1 August 1990); doi: 10.1117/12.20909
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 90 (1 August 1990); doi: 10.1117/12.20910
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 106 (1 August 1990); doi: 10.1117/12.20911
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 113 (1 August 1990); doi: 10.1117/12.20912
Electron Quantum and Transport Structures
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 122 (1 August 1990); doi: 10.1117/12.20913
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 136 (1 August 1990); doi: 10.1117/12.20914
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 145 (1 August 1990); doi: 10.1117/12.20915
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 157 (1 August 1990); doi: 10.1117/12.20916
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 167 (1 August 1990); doi: 10.1117/12.20917
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 177 (1 August 1990); doi: 10.1117/12.20918
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 192 (1 August 1990); doi: 10.1117/12.20919
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 200 (1 August 1990); doi: 10.1117/12.20920
Modulation Doped Field Effect Transistors (Modfets)
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 212 (1 August 1990); doi: 10.1117/12.20921
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 227 (1 August 1990); doi: 10.1117/12.20922
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 238 (1 August 1990); doi: 10.1117/12.20923
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 243 (1 August 1990); doi: 10.1117/12.20924
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 251 (1 August 1990); doi: 10.1117/12.20925
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 258 (1 August 1990); doi: 10.1117/12.20926
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, pg 269 (1 August 1990); doi: 10.1117/12.20927
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