1 August 1990 Cryogenic noise performance of OMVPE-grown InGaAs/InP MODFET
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Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20926
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The 80 K noise performance of the In0.53Ga0.47As/InP modulation-doped field- effect transistor (MODFET) grown by organometallic vapor phase epitaxy (OMVPE) is investigated. MODFETs are fabricated by incorporating the gate-insulating InP layer, double modulation doping scheme, and a burned p-buffer layer into the structure design. Improvements in both the drain and gate breakdown voltages are achieved in the present MODFET design. We demonstrate for the first time the low noise performance in the InGaAs/InP MODFET system with high breakdown voltages. Measuring the 0.3?m-gate devices at 10 GHz and 80 K, a minimum noise figure of 0.26 dB with an associated gain of 10.23 dB was observed. The low cryogenic noise figure is attributed to the reduced parasitics, good carrier confinement, reduced scattering, high electron mobilities and velocities. The microwave and noise performance clearly indicate the advantage of InGaAs channel for carrier transport. The noise measurement serves as a useful technique to detect the onset of ionization processes at high drain potentials.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinbo Kuang, Young-Kai Chen, M. A. Chin, Ralph A. Logan, Tawee Tanbun-Ek, Lester Fuess Eastman, "Cryogenic noise performance of OMVPE-grown InGaAs/InP MODFET", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20926; https://doi.org/10.1117/12.20926
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