Current-voltage characteristics of MBE-grown strained Si1-xGex/Si heterojunction diodes and their temperature dependence

Dan-Xia Xu; Guangdi Shen; Magnus Willander; Goeran Hansson

doi:10.1117/12.20920

1 August 1990 Current-voltage characteristics of MBE-grown strained Si1-xGex/Si heterojunction diodes and their temperature dependence

Dan-Xia Xu, Guangdi Shen, Magnus Willander, Goeran Hansson

Author Affiliations +

Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20920
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Studies of current-voltage (I-V) characteristics and their temperature dependence show that the current transport in MBE-grown Si1-xGex/Si diodes is closely related to the epitaxial film quality. It is mainly controlled by two different mechanisms at low and high temperature. The ideality factor n of the diodes increases as the temperature is reduced, and n increases faster for the diodes which have larger n at room temperature. From comparisons with calculated results, it is proposed that the transport mechanism is diffusion controlled at high temperature and defect-assisted tunneling controlled at low temperature. The results from ? irradiation studies also support this suggestion. Due to the existence of band-offsets, the shift of the I-V curve with temperature of p+-Si1-xGex/n-Si diodes is much smaller than that in n+-Si1-xGex/p-Si diodes, when the current is diffusion controlled. The band-offsets are estimated from these shifts, and the results are in agreement with values measured by another method.

Citation Download Citation

Dan-Xia Xu, Guangdi Shen, Magnus Willander, and Goeran Hansson "Current-voltage characteristics of MBE-grown strained Si1-xGex/Si heterojunction diodes and their temperature dependence", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20920

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