1 August 1990 Improved AlInAs/GaInAs HBTs for high-speed circuits
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Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20907
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
This paper describes the demonstration of CML ring-oscillators and static frequency divider circuits implemented with AlInAs/GalnAs heterojunction bipolar transistors (HBTs) lattice matched to InP substrates. A cutoff frequency (fT) and a maximum frequency of oscillation of 90 GHz and 70 GHz, respectively, have been achieved with a 2x5-?m2 emitter. The ring oscillators demonstrated a 15.8 ps gate delay. The divider circuits were clocked at 24.8 GHz.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joe E. Jensen, William E. Stanchina, Robert A. Metzger, David B. Rensch, Robert J. Ferro, P. F. Lou, M. W. Pierce, T. V. Kargodorian, Y. K. Allen, "Improved AlInAs/GaInAs HBTs for high-speed circuits", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20907; https://doi.org/10.1117/12.20907
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