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1 August 1990 Resonant-tunneling diode stability and its consequences for high-frequency operation
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Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20915
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The existence of negative resistance in double barrier resonant tunneling structures has led to the proposal of various applications for these devices. For many of these applications, stability is an important consideration. This paper will discuss the effect that various device parameters have on stability and on the capability of high frequency device operation. It is concluded that the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices at microwave and millimeter-wave frequencies.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Curtis Kidner, Imran Mehdi, Jack R. East, and George I. Haddad "Resonant-tunneling diode stability and its consequences for high-frequency operation", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20915
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