This paper describes the scaling of High-Electron Mobility Transistors (HEMTs) for ultra-high-speed operations. We predict that, with proper device scaling, an extrinsic switching speed in excess of 300 GHz will be achieved in the near future for state-of-the-art HEMTs.
Loi D. Nguyen,
Paul J. Tasker,
"Scaling issues for ultra-high-speed HEMTs", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20925; https://doi.org/10.1117/12.20925