1 August 1990 Scaling issues for ultra-high-speed HEMTs
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Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20925
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
This paper describes the scaling of High-Electron Mobility Transistors (HEMTs) for ultra-high-speed operations. We predict that, with proper device scaling, an extrinsic switching speed in excess of 300 GHz will be achieved in the near future for state-of-the-art HEMTs.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Loi D. Nguyen, Paul J. Tasker, "Scaling issues for ultra-high-speed HEMTs", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20925; https://doi.org/10.1117/12.20925
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