1 August 1990 Scaling of MESFETs and HEMTs at 0.1-um gate length
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Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20924
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
A novel adaption of the mushroom gate structure has been realized and exhibited in MESFET as well as HEMT devices. The gate structure has a serrated appearance, and it realizes low input capacitance, in addition to the low resistance achievable using a conventional approach. At gate lengths below 0.15 micron, the device structure assumes a qualitatively different form, requiring a reassessment of the scaling rules. Initial results on working devices are presented.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Niru V. Dandekar, Douglas Jon Burrows, Joseph W. Manning, "Scaling of MESFETs and HEMTs at 0.1-um gate length", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20924; https://doi.org/10.1117/12.20924
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