1 August 1990 Ultra-submicrometer microwave GaAs MESFETs and HEMTs
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Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20919
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Ultra-submicron gate GaAs MESFETs and AlGaAs/GaAs HEMTs have been fabricated in an electron- beam lithographic process with gate lengths varying from 25 to 80 nm. For gate length less than 100 nm, electrical characteristics deteriorate due to fringing capacitance at a low aspect ratio. Velocity overshoot is observed for gate length shorter than about 55 nm. The maximum effective electron saturation velocity obtained is 3x107 cm/sec for a 30 nm HEMT. A maximum fT value of 167 GHz was obtained for a 37.5 nm MESFET.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaeheon Han, Joseph M. Ryan, Alfred M. Kriman, David K. Ferry, "Ultra-submicrometer microwave GaAs MESFETs and HEMTs", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20919; https://doi.org/10.1117/12.20919

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