1 August 1990 Ultra-submicrometer microwave GaAs MESFETs and HEMTs
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Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20919
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Ultra-submicron gate GaAs MESFETs and AlGaAs/GaAs HEMTs have been fabricated in an electron- beam lithographic process with gate lengths varying from 25 to 80 nm. For gate length less than 100 nm, electrical characteristics deteriorate due to fringing capacitance at a low aspect ratio. Velocity overshoot is observed for gate length shorter than about 55 nm. The maximum effective electron saturation velocity obtained is 3x107 cm/sec for a 30 nm HEMT. A maximum fT value of 167 GHz was obtained for a 37.5 nm MESFET.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaeheon Han, Jaeheon Han, Joseph M. Ryan, Joseph M. Ryan, Alfred M. Kriman, Alfred M. Kriman, David K. Ferry, David K. Ferry, } "Ultra-submicrometer microwave GaAs MESFETs and HEMTs", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20919; https://doi.org/10.1117/12.20919

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