Split and unrelaxed Ga vacancies in β-Ga2O3

F. Tuomisto; I. Zhelezova; I. Makkonen

doi:10.1117/12.3008560

15 March 2024 Split and unrelaxed Ga vacancies in β-Ga₂O₃

F. Tuomisto, I. Zhelezova, I. Makkonen

Proceedings Volume 12887, Oxide-based Materials and Devices XV; 1288704 (2024) https://doi.org/10.1117/12.3008560
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

So-called split Ga vacancies, where a next-nearest-neighbor Ga atom relaxes strongly creating a structure with two "half-Ga vacancies" are the main defect observed with positron annihilation in almost all as-grown β-Ga₂O₃, irrespective of doping or conduction type. Unrelaxed Ga vacancies are observed in some samples subjected to high-energy particle irradiation. It also appears to n-type doping with Si promotes the formation of unrelaxed Ga vacancies. In spite of the high concentrations of the Ga vacancy related defects in the as-grown materials, the electrical compensation appears not to be directly affected by the vacancies.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

F. Tuomisto, I. Zhelezova, and I. Makkonen "Split and unrelaxed Ga vacancies in β-Ga₂O₃", Proc. SPIE 12887, Oxide-based Materials and Devices XV, 1288704 (15 March 2024); https://doi.org/10.1117/12.3008560

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